Toward Engineering Modeling of Negative Bias Temperature Instability
نویسندگان
چکیده
CONTENTS 14.
منابع مشابه
Critical Modeling Issues in Negative Bias Temperature Instability
Both the physical mechanisms as well as the modeling of negative bias temperature instability (NBTI) have attracted growing attention during the last years. While the reaction-diffusion theory had been the dominant explanation for a relatively long period, a growing number of authors have recently voiced their doubts regarding its validity. We give a brief review of suggested models and highlig...
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A quantitative model is developed that comprehends all the unique characteristics of NBTI degradation. Several models are critically examined to develop a reaction/diffusion based modeling framework for predicting interface state generation during NBTI stress. The model captures key NBTI features including recovery, experimental delay and frequency effects successfully.
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After its discovery nearly forty years ago, negative bias temperature instability (NBTI) has again moved to the center of scientific attention as a significant reliability concern for highly scaled pMOSFETs. 3 The concern stems from the large number of unsaturated dangling bonds (Pb centers ) at the Si/SiO2 interface, which have to be passivated in order to avoid trapping levels in the bandgap....
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